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IGB01N120H2 power semiconductors 1 rev. 2.4 oct. 07 highspeed 2-technology ? designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners ? 2 nd generation highspeed-technology for 1200v applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - e off optimized for i c =1a ? qualified according to jedec 2 for target applications ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c e off t j marking package IGB01N120H2 1200v 1a 0.09mj 150c g01h1202 pg-to-263-3-2 maximum ratings parameter symbol value unit collector-emitter voltage v ce 1200 v triangular collector current t c = 25 c, f = 140khz t c = 100 c, f = 140khz i c 3.2 1.3 pulsed collector current, t p limited by t jmax i cpuls 3.5 turn off safe operating area v ce 1200v, t j 150 c - 3.5 a gate-emitter voltage v ge 20 v power dissipation t c = 25 c p tot 28 w operating junction and storage temperature t j , t stg -40...+150 soldering temperature (reflow soldering, msl1) - 245 c 2 j-std-020 and jesd-022 g c e pg-to263-3-2
IGB01N120H2 power semiconductors 2 rev. 2.4 oct. 07 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 4.5 thermal resistance, junction ? ambient 1) r thja pg-to-220-3-1 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =300 a 1200 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =1a t j =25 c t j =150 c v ge = 10v, i c =1a, t j =25 c - - - 2.2 2.5 2.4 2.8 - - gate-emitter threshold voltage v ge(th) i c =30 a, v ce = v ge 2.1 3 3.9 v zero gate voltage collector current i ces v ce =1200v, v ge =0v t j =25 c t j =150 c - - - - 20 80 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 40 na transconductance g fs v ce =20v, i c =1a - 0.75 - s dynamic characteristic input capacitance c iss - 91.6 - output capacitance c oss - 9.8 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 3.4 - pf gate charge q gate v cc =960v, i c =1a v ge =15v - 8.6 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7 - nh 1) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for collector connection. pcb is vertical without blown air.
IGB01N120H2 power semiconductors 3 rev. 2.4 oct. 07 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 13 - rise time t r - 6.3 - turn-off delay time t d(off) - 370 - fall time t f - 28 - ns turn-on energy e on - 0.08 - turn-off energy e off - 0.06 - total switching energy e ts t j =25 c, v cc =800v, i c =1a, v ge =15v/0v, r g =241 ? , l 2) =180nh, c 2) =40pf energy losses include ?tail? and diode 3) reverse recovery. - 0.14 - mj switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 12 - rise time t r - 8.9 - turn-off delay time t d(off) - 450 - fall time t f - 43 - ns turn-on energy e on - 0.11 - turn-off energy e off - 0.09 - total switching energy e ts t j =150 c v cc =800v, i c =1a, v ge =15v/0v, r g =241 ? , l 2) =180nh, c 2) =40pf energy losses include ?tail? and diode 4) reverse recovery. - 0.2 - mj switching energy zvt, inductive load value parameter symbol conditions min. typ. max. unit igbt characteristic turn-off energy e off v cc =800v, i c =1a, v ge =15v/0v, r g =241 ? , c r 2) =1nf t j =25 c t j =150 c - - 0.02 0.044 - - mj 2 ) leakage inductance l and stray capacity c due to dynamic test circuit in figure e 4) commutation diode from device ikp01n120h2
IGB01N120H2 power semiconductors 4 rev. 2.4 oct. 07 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 1a 2a 3a 4a 5a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v ,01a 0,1a 1a 10a 200 s dc 50 s 5 s 2 s 20 s t p =1 s f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 800v, v ge = +15v/0v, r g = 241 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c) p tot , power dissipation 25c 50c 75c 100c 125c 150c 0w 5w 10w 15w 20w 25w 30w i c , collector current 25c 50c 75c 100c 125c 150c 0a 1a 2a 3a 4a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
IGB01N120H2 power semiconductors 5 rev. 2.4 oct. 07 i c , collector current 0v 1v 2v 3v 4v 5v 0a 1a 2a 3a 4a 5a 12v 10v 8v 6v v ge =15v i c , collector current 0v 1v 2v 3v 4v 5v 6v 0a 1a 2a 3a 4a 5a 12v 10v 8v 6v v ge =15v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristics ( t j = 25 c) figure 6. typical output characteristics ( t j = 150 c) i c , collector current 3v 5v 7v 9v 0a 1a 2a 3a 4a 5a t j =+150c t j =+25c v ce(sat) , collector - emitter saturation voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v i c =2a i c =1a i c =0.5a v ge , gate - emitter voltage t j , junction temperature figure 7. typical transfer characteristics ( v ce = 20v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v)
IGB01N120H2 power semiconductors 6 rev. 2.4 oct. 07 t , switching times 0a 1a 2a 10ns 100ns 1000ns t r t d(on) t f t d(off) t , switching times 50 ? 100 ? 150 ? 200 ? 1ns 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j = 150 c, v ce = 800v, v ge = +15v/0v, r g = 241 ? , dynamic test circuit in fig.e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 150 c, v ce = 800v, v ge = +15v/0v, i c = 1a, dynamic test circuit in fig.e) t , switching times 0c 50c 100c 150c 10ns 100ns t r t d(on) t f t d(off) v ge(th) , gate - emitter threshold voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v typ. min. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 800v, v ge = +15v/0v, i c = 1a, r g = 241 ? , dynamic test circuit in fig.e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.03ma)
IGB01N120H2 power semiconductors 7 rev. 2.4 oct. 07 e , switching energy losses 0a 1a 2a 3a 0.0mj 0.2mj 0.4mj 0.6mj e on 1 e off e ts 1 e , switching energy losses 50 ? 100 ? 150 ? 200 ? 0.05mj 0.10mj 0.15mj 0.20mj 0.25mj e ts 1 e on 1 e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 150 c, v ce = 800v, v ge = +15v/0v, r g = 241 ? , dynamic test circuit in fig.e ) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 150 c, v ce = 800v, v ge = +15v/0v, i c = 1a, dynamic test circuit in fig.e ) e , switching energy losses -40c 25c 100c 150c 0.00mj 0.05mj 0.10mj 0.15mj 0.20mj 0.25mj e ts 1 e on 1 e off e off , turn off switching energy loss 0v/us 1000v/us 2000v/us 3000v/us 0.00mj 0.02mj 0.04mj 0.06mj i c =0.3a, t j =150c i c =0.3a, t j =25c i c =1a, t j =150c i c =1a, t j =25c t j , junction temperature dv/dt , voltage slope figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 800v, v ge = +15v/0v, i c = 1a, r g = 241 ? , dynamic test circuit in fig.e ) figure 16. typical turn off switching energy loss for soft switching ( dynamic test circuit in fig. e ) 1 ) e on and e ts include losses due to diode recovery. 1 ) e on and e ts include losses due to diode recovery. 1 ) e on and e ts include losses due to diode recover y .
IGB01N120H2 power semiconductors 8 rev. 2.4 oct. 07 z thjc , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 v ge , gate - emitter voltage 0nc 5nc 10nc 15nc 0v 5v 10v 15v 20v u ce =240v u ce =960v t p , pulse width q ge , gate charge figure 17. igbt transient thermal impedance as a function of pulse width ( d = t p / t ) figure 18. typical gate charge ( i c = 1a) c , capacitance 0v 10v 20v 30v 10pf 100pf c rss c oss c iss v ce , collector - emitter voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0v 200v 400v 600v 800v 1000v 0.0a 0.2a 0.4a 0.6a 0.8a 1.0a i ce collector c urrent v ce , collector - emitter voltage t p , pulse width figure 19. typical capacitance as a function of collector-emitter voltage ( v ge = 0v, f = 1mhz) figure 20. typical turn off behavior, hard switching (v ge =15/0v, r g =220 ? , t j = 150 c, dynamic test circuit in figure e) r ,(k/w) , (s) 2.5069 0.00066 1.1603 0.00021 0.8327 0.00426 c 1 = r 1 r 1 r 2 c 2 = r 2
IGB01N120H2 power semiconductors 9 rev. 2.4 oct. 07 v ce , collector - emitter voltage 0.0 0.4 0.8 1.2 1.6 2.0 0v 200v 400v 600v 800v 1000v 0.0a 0.2a 0.4a 0.6a 0.8a 1.0a i ce collector c urrent t p , pulse width figure 21. typical turn off behavior, soft switching (v ge =15/0v, r g =220 ? , t j = 150 c, dynamic test circuit in figure e)
IGB01N120H2 power semiconductors 10 rev. 2.4 oct. 07 pg-to263-3-2
IGB01N120H2 power semiconductors 11 rev. 2.4 oct. 07 figure a. definition of switching times i rrm 90% i rrm 10% i rrm di /dt f t rr i f i,v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j figure d. thermal equivalent circuit figure e. dynamic test circuit leakage inductance l = 180nh, stray capacitor c = 40pf, relief capacitor c r = 1nf (only for zvt switching) figure b. definition of switching losses ?? v dc dut (diode) ? l r g dut (igbt) l ? l c c r
IGB01N120H2 power semiconductors 12 rev. 2.4 oct. 07 edition 2006-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 11/6/07. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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